advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower gate charge r ds(on) 55m fast switching characteristic i d 19a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.8 /w rthj-a 40 /w data and specifications subject to change without notice operating junction temperature range -55 to 150 201201041 thermal data parameter 1 storage temperature range continuous drain current, v gs @ 10v 12 pulsed drain current 1 60 total power dissipation 44.6 -55 to 150 total power dissipation 3 3.13 gate-source voltage + 20 continuous drain current, v gs @ 10v 19 AP30T10GS-HF halogen-free product maximum thermal resistance, junction-ambient (pcb mount) 3 parameter rating drain-source voltage 100 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-263 package is widely preferred for commercial-industrial surface mount applications and suited for switching powe r applications. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 55 m v gs =5v, i d =8a - - 85 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.9 - 2.5 v g fs forward transconductance v ds =10v, i d =12a - 14 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =12a - 13.5 21.6 nc q gs gate-source charge v ds =80v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9 - nc t d(on) turn-on delay time v ds =50v - 6.5 - ns t r rise time i d =12a - 18 - ns t d(off) turn-off delay time r g =1 -20- ns t f fall time v gs =10v - 5 - ns c iss input capacitance v gs =0v - 840 1340 pf c oss output capacitance v ds =25v - 115 - pf c rss reverse transfer capacitance f=1.0mhz - 80 - pf r g gate resistance f=1.0mhz - 1.6 3.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =12a, v gs =0v - - 1.3 v t rr reverse recovery time i s =12a, v gs =0v - 40 - ns q rr reverse recovery charge di/dt=100a/s - 70 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP30T10GS-HF
a p30t10gs-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 10 20 30 40 0 4 8 12 16 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t c = 150 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v) 40 50 60 70 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =8a t c =25 o c i d =1ma
AP30T10GS-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain current fig 12. gate charge waveform v.s. case temperature 4 0 2 4 6 8 10 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =60v v ds =80v i d =12a q v g 4.5v q gs q gd q g charge 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 4 8 12 16 20 24 25 50 75 100 125 150 175 t c , case temperature ( o c ) i d , drain current (a)
|
